High-order curvature-compensated CMOS bandgap voltage reference

摘要

A novel high-order curvature-compensated CMOS bandgap voltage reference (BGR) is proposed in CSMC 0.5μm CMOS process. By adding a piecewise-curvature current in the low temperature region and a piecewise-curvature current in the high temperature region to a conventional BGR, the proposed high-order curvature-compensated BGR achieves a reference voltage with lower temperature coefficient (TC). Simulation results show that the TC of the proposed high-order curvature-compensated BGR is only 0.62ppm/°C while the TC of the conventional BGR is about 2.82ppm/°C. The proposed high-order curvature-compensated BGR achieves the power supply rejection ratio (PSRR) of -53.98dB, -53.97dB, -52.84dB, -39.097dB and -21.75dB at 10Hz, 1kHz, 10kHz, 100kHz and 1MHz respectively.