Design of ring oscillator with better temperature, supply voltage process stability with 32nm FDSOI transistor for ISM band application

摘要

Nowadays, the development of VLSI technology mainly directed towards the minimization of semiconductor devices which is heavily dependent on the advancement in CMOS technology. The minimum dimension of single devices in present day's technology is below 100nm in channel length. As CMOS technology dimension is aggressively being scaled down, there are certain limitations on how small a transistor can be developed with conventional CMOS techniques. Hence the transistors are developed with different alternative techniques to overcome these limitations as MUGFET, FINFET & FDSOI techniques. This paper is focused on design of ring oscillator with 32nm conventional CMOS transistor & with 32nm FDSOI transitory in HSpice software. With ring oscillator designed using FDSOI(Fully depleted silicon on insulator) transistor has 400% better supply voltage stability, 200% better process (Gate length) stability & nearly an ideal performance for temperature variation range from 0°C to 125°C as compare with conventional CMOS transistor.