Dynamic characteristic evaluation of a 600V reverse blocking IGBT device

摘要

This paper presents an overview and analysis of operation of RB IGBT transistors. The series of experiments is devoted characterisation of 600 V, 85 A RB IGBT devices under hard and soft switching conditions using a double-pulse test circuit. The switching behaviour, particularly turn-on and turn-off characteristics, of these devices under various conditions are evaluated. Obtained results allow to assess the impact of reverse recovery process on the turn-on losses and compare the characteristic of RB IGBTs with various types of discrete diodes.