Comparison of E-mode GaN HEMT Using Different Gate Oxide Stack Approach

摘要

In this study, three different types of gate recessed E-mode GaN MIS-HEMTs were fabricated by different gate oxide stack techniques. The gate oxide stacks were designed with different oxide potential barrier, resulting in the device with different threshold voltages. Each device performance was evaluated, compared and discussed. The proposed device with charge trap gate stack showed the best device performance with high threshold voltage and high maximum drain current density in this work.