Gate impedance characterization and performance evaluation of 3.3kV Silicon Carbide MOSFETs

摘要

For the development of new wide bandgap high voltage semiconductors, it is necessary to carry out a thorough characterization of their behavior towards their future use in real applications. In this document a basic characterization of new 3.3 kV SiC MOSFET prototypes is presented, both static and dynamic. While the static characterization provides quite good figures of merit of the prototype under test, in the dynamic characterization, slow transitions are detected and they will be explained proposing a model for the configuration of the gate cell inner connections of the presented prototype.