Optimized back side process for high performance mono silicon PERC solar cells

摘要

In this paper, we proposed the high performance mono silicon PERC solar cells by using industrial mass production technology. Using the optimized back side passivation and pattern design on commercially available 156 mm × 156 mm p-type Czochralski-grown crystalline mono silicon wafers, the best cell efficiencies of 21.01% and the average cell efficiencies of 20.7%. It can be found that employing the optimized back side passivation and pattern design have the excellent aluminum back surface field and higher Voc. Besides, the PERC solar cells also passed the PID test which condition was indicated to be 85 degree Celsius and 85% RH in climatic chamber for 192 hours. Observed the power loss <; 3% and no EL darkened area were found after PID test for the PERC solar cells.