PAD cells performances in submicron technologies

摘要

Submicron designs have the price of dealing with more unwanted physical effects such as high interconnect impedance, noise propagation or Miller effect. This paper's intent is to analyze PAD cells performance for submicron technologies (from 90nm to 55nm). The methods used are HSPICE simulations and cell characterization (NLDM and CCS). The performance of PAD cells will be analyzed through timing parameters, input capacitance values and internal power.