Loss factor of Alumina and AlN thin films created by reactive magnetron sputtering

摘要

Thin Al2O3 and AlN films are used in many applications in electronics. The films have been created on evaporated Al electrodes by reactive magnetron sputtering; oxygen and nitrogen have been used as working gases. The capacitors have been formed by evaporation of a strip across the Al electrodes with the dielectric film. Loss factor of the films has been examined in dependence on the pressure of the working gas, the flow rate of the working gas and power of the generator in the frequency range of 100 Hz-20 kHz. Conditions for producing of the films with the minimum loss factor have been found.