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A double-sided fabrication process for intrafascicular parylene C based electrode arrays

机译:束内聚对二甲苯C基电极阵列的双面制造工艺

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After the development of a single-sided fabrication process for intrafascicular parylene C based electrode arrays tests showed that an increase in integration density can only be achieved by a double-side process. The process uses 25 μm thick platinum iridium foil, which is thinned down with the laser and sandwiched between two 10 μm thick parylene C layers. Utilizing a picosecond laser (355 nm Nd:YVO4) it was possible to fabricate 40 μm thick electrodes that can be implanted directly in the nerve without relying on additional support layers like chitosan or silk. The fabricated samples feature three 80 μm diameter electrodes on each side and a large ground electrode that is opened to both sides. Impedance mismatches from front to back side as a result of the fabrication process are compensated by electrochemical deposition of nanostructured platinum. This step makes it possible to bring the impedances of the small electrodes down to the range of just a few kΩ at 1 kHz and illustrate the additionally gained surface due to the picosecond laser ablation on the front side electrodes. The safely injectable charge per pulse was found to be 635.75 μC/cm2 for such coated electrodes. Optical investigations show that this fabrication process offers an alternative to established lithographic processes for thin and flexible electrode arrays in neural implants.
机译:在开发了基于束内聚对二甲苯C的电极阵列的单面制造工艺之后,测试表明,集成密度的提高只能通过双面工艺来实现。该工艺使用厚度为25μm的铂铱箔,该箔用激光打薄并夹在两个10μm厚的聚对二甲苯C层之间。利用皮秒激光(355 nm Nd:YVO4),可以制造40μm厚的电极,可以直接将其植入神经中,而无需依赖于壳聚糖或蚕丝等其他支持层。所制作的样品在每侧具有三个直径为80μm的电极,并且在两侧均开口有一个较大的接地电极。由于制造过程而导致的从正面到背面的阻抗失配可通过纳米结构化铂的电化学沉积来补偿。该步骤使得可以将小电极的阻抗降低到1 kHz时仅几kΩ的范围,并说明由于皮秒激光在正面电极上进行烧蚀而额外获得的表面。对于这种涂覆电极,发现每个脉冲的可安全注入电荷为635.75μC/ cm2。光学研究表明,这种制造工艺为神经植入物中薄而柔软的电极阵列的既定光刻工艺提供了替代方法。

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