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Enhancing EUV mask blanks usability through smart shift and blank-design pairing optimization

机译:通过智能转换和空白设计配对优化来提高EUV掩模空白的可用性

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EUV Defect avoidance techniques will play a vital role in extreme ultraviolet lithography (EUVL) photomask fabrication with the anticipation that defect free mask blanks won't be available and that cost effective techniques will not be available for defect repairing. In addition, mask shops may not have a large inventory of expensive EUV mask blanks. Given these facts, defect avoidance can be used as cost effective technique to optimize the mask blank and design data (mask data) pair selection across mask blank manufacturers and mask shops so that overall mask blank utilization can be enhanced. In previous work, it was determined that the pattern shift based solution increases the chance that a defective mask blank can be used that would otherwise be discarded. In pattern shift, design data is shifted such that defects are either moved to isolated regions or hidden under the patterns that are written. However pattern shifts techniques don't perform well with masks with higher defect counts. Pattern shift techniques in this form assume all defects to be equally critical. In addition, a defect is critical or important only if it lands on the main pattern. A defect landing on fill, sub-resolution assist feature (SRAF) or fiducial areas may not be critical. In this paper we assess the performance of pattern shift techniques assuming defects that are not critical based upon size or type, as well as defects landing in non-critical areas (smart shift) can be ignored. In a production mask manufacturing environment it is necessary to co-optimize and prioritize blank-design pairing for multiple mask layouts in the queue with the available blanks. A blank-design pairing tool maximizes the utilization of blanks by finding the best pairing between blanks and design data so that the maximum number of mask blanks can be used. In this paper we also propose a novel process which would optimize the usage of costly EUV mask blanks across mask blank manufacturers and mask shops which write masks.
机译:EUV避免缺陷技术将在极紫外光刻(EUVL)光掩模制造中发挥至关重要的作用,因为人们期待着无缺陷的掩模坯料将不可用,而成本有效的技术也将不用于缺陷修复。此外,口罩商店可能没有大量的昂贵EUV口罩毛坯。考虑到这些事实,避免缺陷可以用作经济有效的技术,以优化掩膜毛坯制造商和掩膜车间的掩膜毛坯和设计数据(掩膜数据)对的选择,从而可以提高整体掩膜毛坯的利用率。在先前的工作中,已确定基于图案偏移的解决方案增加了可以使用有缺陷的掩模坯料的机会,否则该缺陷将被丢弃。在图案移位中,将设计数据移位,以便将缺陷移动到隔离的区域或隐藏在写入的图案下。但是,图案移位技术在缺陷计数较高的掩模上效果不佳。这种形式的图案移位技术假定所有缺陷都同样重要。另外,仅当缺陷落在主要图案上时,它才是关键或重要的。落在填充,次分辨率辅助特征(SRAF)或基准区域上的缺陷可能并不关键。在本文中,我们假设基于尺寸或类型不是很关键的缺陷以及在非关键区域降落的缺陷(智能移位)都可以忽略,从而评估模式移位技术的性能。在生产掩模的生产环境中,有必要针对队列中具有可用空白的多个掩模布局对空白设计配对进行优化和优先排序。坯料设计配对工具通过在坯料和设计数据之间找到最佳配对来最大化坯料的利用率,从而可以使用最大数量的蒙版坯料。在本文中,我们还提出了一种新颖的工艺,该工艺可以优化口罩毛坯制造商和编写口罩的口罩车间之间昂贵的EUV口罩毛坯的使用。

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