DIBL in enhanced dynamic threshold operation of UTBB SOI with different drain engineering at high temperatures

摘要

Focusing on the DIBL (Drain Induced Barrier Lowering), this paper investigates for the first time the influence of the overlap/underlap gate to drain engineering on UTBB SOI devices in conventional and enhanced dynamic threshold voltage operation at high temperatures. Although the temperature degrades this parameter, the best DIBL performance was obtained for the enhanced mode operation and longer underlap length.