On the ESD self-protection capability of integrated UHV resistor

摘要

ESD characteristics of the UHV resistors (UHVRs) has been studied. The UHVR under study suffers from a low ESD level. The failure analysis has been done with the aid of TLP measurements and simple equivalent circuit simulations. From the analysis, a transient large voltage difference on the field oxide due to the RC delay by the large resistance and the parasitic capacitances of UHVR has been found to be the cause of the low ESD level. Finally, it has been shown that the reduction of RC delay by the decrease of the parasitic capacitances, which was possible through a simple layout modification, can improve the ESD performance of the UHVR.