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Time-of-Flight Secondary Ion Mass Spectrometry profiling for arsenic in silicon dioxide matrix

机译:二氧化硅基质中砷的飞行时间二次离子质谱分析

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This paper showed that 75As was a better analyte species than 28Si75As in silicon dioxide for accurate quantitative profiling by Time-Of-Flight Secondary Ion Mass Spectrometry. Contrary to silicon matrix, the ion yield of 75As showed 1 order higher than 28Si 75As in silicon dioxide matrix. The average RSF for 75As in silicon dioxide was determined to be 5.62E20 and lower variation of 75As RSF was observed.
机译:本文表明,用飞行时间二次离子质谱法进行准确的定量分析时,与二氧化硅中的28Si75As相比,75As是更好的分析物种类。与硅基质相反,在二氧化硅基质中,75As的离子产率比28Si 75As高1个数量级。测得二氧化硅中75As的平均RSF为5.62E20,观察到75As RSF的变化较小。

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