Gallium-doped zinc oxide films as transparent and conductive substrates applying in dye-sensitized solar cell

摘要

The gallium doped ZnO films were prepared and characterized to be used as transparent and conductive substrates replacing commercial ITO substrate applying for dye-sensitized solar cell. The thickness effects on electrical, optical and structural properties of gallium-doped ZnO films were investigated. It was found that the lowest resistivity of 3.96×10-4 Q·cm and the highest hall mobility of 14.12 cm2/(V·s) were obtained from 300 nm-thick gallium doped ZnO film as well as the high transmittance of 85% in the visible range. The demonstrated dye-sensitized solar cell used obtained gallium-doped ZnO substatrate showed the overall conversion efficiency of 1.77% with a fill factor of 0.507.