Development of FF Circuits for Measures Against Power Supply Noise

摘要

Power supply noise such as IR-drop affects the operation of memory elements. The authors have shown that FF circuits also caused bit-flip errors which are similar to those in SRAMs. In addition, the authors clarified that the basic problem of the error occurrence is structures themselves of conventional FF circuits. In this paper, new FF circuits that are countermeasures for bit-flip errors caused by power supply noise are proposed. The effectiveness of proposed FFs was verified by using circuit simulation and their performances were evaluated.