Evaluation of the sensitivity of a COTS 90-nm SRAM memory at low bias voltage

摘要

This paper presents an experimental study of the sensitivity to 14-MeV neutrons to low bias voltage of a COTS 90-nm Cypress SRAM. Experiments involving power supplies ranging from 0.5V to 3.3V are presented and discussed. These results have also been compared with cross-section and SER theoretical predictions.