Fully transparent solution-processed carbon nanotube thin film transistors on a flexible substrate

摘要

Fully transparent solution-processed carbon nanotube thin film transistors (CNT-TFTs) on flexible substrate are proposed and fabricated by a facile and low-cost process. By using 95%-semiconducting enriched carbon nanotubes as channel and transparent indium tin oxide as gate, source and drain electrodes, CNT-TFTs with a high on/off current ratio of 2.68×106, a low threshold voltage of 0.38 V, a steep subthreshold swing of 0.28 V/dec, a good device mobility of 2.95 cm2/vs as well as a high transparency of 91.1% has been achieved. In addition, the whole fabrication of solution-processed CNT-TFTs involves no high temperature and complicated processing, which satisfies the manufacturing requirements for future transparent and flexible electronics.