Fabrication process of a TSV interposer for radio frequency chip with integrated passive devices

摘要

This paper presents the fabrication process of a TSV interposer for RF chip with integrated passive devices. The passive devices fabricated by lift-off process of thin film include a thin-film resistor and three parallel-plate capacitors. The whole area of the interposer is 5.7 mm × 5mm and the thickness of interposer is only about 160um. Compared to traditional RF systems with discrete passive devices integrated on PCB, the area of the interposer is only about 1/27.