Quantitative Analysis of Trace Metallic Contamination on Ⅲ-V Compound Semiconductor Surfaces

摘要

We studied the detection by TXRF of several transition metals on the surface of Ⅲ-V materials for high mobility channel. It has been found that the lower limits of detection of some transition metals on the surface of III-V materials become higher than that on the Si surface because the sum peaks or Raman scattering peaks as well as the fluorescent X-ray main signals from the materials themselves partially cover those from the transition metals.