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A numerical study of the effect of thermal radiation on the forced air cooling of low heat flux electronic chips mounted on one side of a vertical channel

机译:热辐射对垂直通道一侧安装的低热通量电子芯片强制风冷影响的数值研究

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A numerical study of steady, laminar, two-dimensional combined convection and radiation air cooling of four identical rectangular electronic chips (made of silicon) mounted on the left side of a vertical channel is presented in this paper. The conduction in the walls (composed of copper-epoxy) as well as in the chips in which energy is generated due to joule heating is also taken into account. The outside walls are treated as insulated. At the channel inlet the velocity is uniform. The stream function-vorticity-temperature approach with the finite-difference-based methodology has been applied to obtain flow and thermal fields in the fluid, temperature distributions in the chips and the walls, and pressure distribution in the fluid. The parameters varied to study the effect of radiation on the cooling of the silicon chips are: Reynolds number, Grashof number, emissivity of the chips and of the inside wall surfaces, chip height, chip width, and the gap between the successive chips. The energy generation rate is such that it gives rise to average heat flux in the chips in the range of 281.25 W/m2 to 1.875×103 W/m2, which is relatively low. The results reveal that there is a 14.28% drop in the dimensionless maximum temperature of the chips at Re = 500, Gr = 8.65 × 105 as compared to the case when the radiation effect is not considered. The increase in emissivity of the chips from 0.1 to 0.9 results in considerable rise in the temperature of the wall opposite to the chips accompanied by a small drop in the chip temperature. The pumping power increases by 82.69% when the chip height is increased from 0.3 to 0.6. However, increasing the chip width results in rise in pumping power by 30%. There is only a marginal drop in pumping power requirement when radiation is considered in the modeling. The novelty of this work lies in the use of realistic chip and wall materials, investigation of the effect of various geometrical parameters, calculation of pressure distribution and pumping power, and reporting of radiation effect on the walls opposite to the chips. This is only work so far which solves the flow, thermal and pressure fields in electronics cooling using stream function-vorticity-temperature approach and applies Gebhart's absorption factor method for calculation of radiation exchange.
机译:本文介绍了安装在垂直通道左侧的四个相同的矩形电子芯片(由硅制成)的稳态,层状,二维组合对流和辐射空气冷却的数值研究。墙壁(由铜 - 环氧树脂组成)以及芯片中的导通也考虑到芯片中的芯片中也考虑到。外墙被视为绝缘。在通道入口处,速度是均匀的。具有有限差异的方法的流功能 - 涡度 - 温度方法已经应用于获得流体中的流动和热场,芯片中的温度分布以及流体中的压力分布。改变的参数研究辐射对硅芯片冷却的影响是:雷诺数,碎片的雷诺数,芯片的发射率和内壁表面,芯片高度,芯片宽度以及连续芯片之间的间隙。能量产生率使得它在281.25W / m 2至1.875×103W / m 2的范围内产生平均热通量,其相对较低。结果表明,与不考虑辐射效应的情况相比,在RE = 500,GR = 8.65×105的芯片的无量纲最高温度下降14.28%。芯片的发射率从0.1到0.9的增加导致与芯片相对的壁的温度相当大的升高,伴随着芯片温度的小下降。当芯片高度从0.3增加到0.6时,泵送功率增加了82.69%。然而,增加芯片宽度导致泵送功率增加30%。当在建模中考虑辐射时,泵送电源只有边缘下降。这项工作的新颖性在于使用现实芯片和墙壁材料,对各种几何参数的影响,压力分布和泵浦电力的计算,以及对芯片对面的壁的报告。这仅适用于迄今为止,使用流功能 - 涡度 - 温度方法解决了电子设备中的流动,热和压力场,并应用Gebhart的吸收因子方法来计算辐射交换。

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