Uniformity Study of GaAs-based Vertical-Cavity Surface-Emitting Laser Epiwafer Grown by MOCVD Technique

摘要

In this paper, a highly uniform 850 nm VCSEL epiwafer was grown by using MOCVD technique. The VCSEL quantum wells exhibit a peak emission wavelength of 839.5 nm. The grown epiwafer exhibits a Fabry-Perot cavity resonance at 846.5 nm. Various VCSEL devices fabricated from the center to the edge of the VCSEL epiwafer show similar trend for the L-I and output spectral characterizations. Devices fabricated at the edge of the epiwafer exhibits different characterization trends due to the growth limitations.