Effect of Indium Content in the Channel on the Electrical Performance of Metamorphic High Electron Mobility Transistors

摘要

Metamorphic InAlAs/InGaAs High Electron Mobility Transistors (HEMT) has demonstrated several advantages over Pseudomorphic-HEMT on GaAs and Lattice Matched-HEMT on InP substrate. The high Indium content of the channel (50%) lattice matched to the substrate is the key factor behind the superior Metamorphic HEMT performance. Metamorphic HEMT allows a flexible range of InGaAs channel compositions from 30% to 80 % (based on the applications) [1] on a compositionally graded buffer. Commercially available TCAD is used to simulate the Metamorphic HEMT to study the effect of varying Indium % in the channel layer on the electrical characteristics of the device.