Process development of 40 nm silicon nanogap for sensor application

摘要

A recent breakthrough in nanotechnology provides a great extent in sensor fabrication and application. The technology has emerged as a powerful technique to minimize the size of devices; amount of materials, energy and time consumption. Nanogap based sensor is one of the sensor that capable of characterizing and quantifying molecules selectively and sensitively with good electrical behavior. In this manuscript, we present a collaboration work between UniMAP, MARDI and UPM in the process development of 40 nm silicon nanogap for sensor application. The process consists of a combination of electron beam lithography (EBL) method and conventional photolithography method. Both methods were for nanogap and electrodes pattern respectively. Silicon on insulator (SOI) substrate was used to fabricate the nanogap structure and gold was used for the electrode. The ability of EBL system to fabricate a gap in nanometer scale with direct lithography technique on SOI substrate gives advantages in this development work. The developed silicon nanogap device was physically characterized with scanning electron microscope (SEM). The sensor application was accomplished by testing the device with different level of pH solutions using a dielectric analyzer.