首页> 外文会议>IEEE International Conference on Semiconductor Electronics >Atomic force microscope base nanolithography for reproducible micro and nanofabrication
【24h】

Atomic force microscope base nanolithography for reproducible micro and nanofabrication

机译:用于可再生微型和纳米制备的原子力显微镜基础纳米光刻

获取原文

摘要

Atomic force microscopy nanolithography (AFM) is a strong fabrication method for micro and nano structure due to its high spatial resolution and positioning abilities. Mixing AFM nanolithography with advantage of silicon-on-insulator (SOI) technology provides the opportunity to achieve more reliable Si nanostructures. In this letter, we try to investigate the reproducibility of AFM base nanolithography for fabrication of the micro/nano structures. In this matter local anodic oxidation (LAO) procedure applied to pattern a silicon nanostructure on p-type (10 cm) SOI using AFM base nanolithography. Then chemical etching is applied, as potassium hydroxide (saturated with isopropyl alcohol) and hydrofluoric etching for removing of Si and oxide layer, respectively. All parameters contributed in fabrication process were optimized and the final results revealed a good potential for using AFM base nanolithography in order to get a reproducible method of fabrication.
机译:原子力显微镜纳米光刻(AFM)是由于其高空间分辨率和定位能力,用于微型和纳米结构的强制造方法。将AFM纳米线与绝缘体(SOI)技术的优点混合,提供了实现更可靠的Si纳米结构的机会。在这封信中,我们尝试研究AFM基础纳米线的重现性以制造微/纳米结构。在此,使用AFM基础纳米线施加局部阳极氧化(LAO)程序,其施加在p型(10cm)SOI上施加硅纳米结构。然后施加化学蚀刻,作为氢氧化钾(用异丙醇饱和)和用于除去Si和氧化物层的氢氟蚀刻。优化了制造过程中贡献的所有参数,并且最终结果揭示了使用AFM基础纳米线的良好电位,以便获得可重复的制造方法。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号