Static Quasi 3D Thermal Simulation of Ion Implanted Vertical Cavity Surface Emitting Lasers

摘要

In this paper, we simulate static thermal behavior of a gain guided VCSEL by solving quasi 3D heat equation. Several heat sources such as Joule heating, reabsorption of spontaneous emission and nonradiative recombination in different vertical positions of the device are considered. We use inhomogeneous thermal conductivities and see reduction of temperature in whole device than the case of homogenous. Moreover, by increasing current spreading, thermal lensing increases. However, increasing the aperture radius causes broadening of profile and lowering of temperature peak. We also found that Joule heating of p-DBR has critical role in temperature distribution. We also analyze the effect of top DBR period numbers on threshold current and active layer temperature peak.