Numerical Modeling of a Diffusion-Based In{sub}0.53Ga{sub}0.47As Lateral PIN Photodiode for 10 Gbit/s Optical Communication Systems

摘要

A novel purely diffusion-based In{sub}0.53Ga{sub}0.47As lateral PIN photodiode was successfully modeled. Device dimensions are 12 × 1.8 μm{sup}2 with electrode spacing of 1.5 μm and width of 1 μm. The effective intrinsic region width is ～0.2 μm. The 2D modeled device achieved responsivity of 0.765 A/W and -3dB frequency of 10.9 GHz and is able to cater for 10 Gbit/s optical communication system networks. The device was biased at -2V and illuminated with a 5 W/cm{sup}2 optical spot power at a wavelength of 1.55 μm. SNR ratio was recorded at 31.2 dB.