Properties of p-C:B films using graphite target and fabrication of p-C:B/n-Si heterojunction solar cells

摘要

This paper reports on the successful deposition of boron (B)-doped p-type amorphous carbon (p-C:B) films, and fabrication of p-C:B/n-Si by pulsed laser deposition (PLD) using graphite target. The cells performances have been given in the dark I-V rectifying curve and I-V working curve under illumination when exposed to AM 1.5 illumination condition (100 mW/cm{sup}2, 25 °C). The open circuit voltage (V{sub}oc) and short circuit current density (J{sub}sc) for p-C:B/n-Si are observed to vary from 230 to 250 mV. The p-C:B/n-Si cell fabricated using the target with the amount of B by 3 weight percentages (Bwt%) shows highest energy conversion efficiency,η= 0.20% and fill factor, FF = 45%. The quantum efficiency (QE) of the p-C:B/n-Si cells are observed to improve with Bwt%.