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Investigation of AM-AM performance in CMOS digital power amplifiers

机译:CMOS数字功率放大器中AM-AM性能的研究

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This paper presents the analysis of switching-current (SC) and switching-resistance (SR) modes of operation in digital power amplifiers (DPAs). Large output power back-off (PBO) generally shifts the DPA from SR to SC operation. Hence, an analytical study is performed to characterize these regimes. A current-mode class-D architecture has been used to implement a DPA in which both operation conditions were examined. Two mechanisms were addressed to study the AM-AM performance of the DPA, namely the knee voltage and the output resistance of the transistor. To evaluate the impact of these parameters in the AM-AM profile, we proposed a simplified transistor model in which both parameters can be defined independently without affecting each other. This allowed us to isolate and determine the effects in the AM-AM distortion, helping to conclude that the output resistance turns out to be the most dominant parameter. The study has been validated using simulations in Spectre RF with three different CMOS process nodes (130, 65, and 45nm).
机译:本文介绍了数字功率放大器(DPA)中的开关电流(SC)和开关电阻(SR)工作模式的分析。大的输出功率补偿(PBO)通常会将DPA从SR转换为SC操作。因此,进行了分析研究以表征这些制度。当前模式D类体系结构已用于实现DPA,在该DPA中已检查了两种操作条件。研究了两种机制来研究DPA的AM-AM性能,即拐点电压和晶体管的输出电阻。为了评估这些参数在AM-AM配置文件中的影响,我们提出了一种简化的晶体管模型,其中两个参数可以独立定义而不会互相影响。这使我们能够隔离并确定AM-AM失真中的影响,有助于得出结论,输出电阻原来是最主要的参数。使用Spectre RF中的三个不同CMOS工艺节点(130、65和45nm)进行的仿真已验证了该研究。

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