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Synthesis and fundamental energy analysis of fault-tolerant CMOS circuits

机译:容错CMOS电路的合成与基本能量分析

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摘要

In this study, we perform a physical-information-theoretic analysis to obtain fundamental energy dissipation bounds for fault-tolerant reversible CMOS circuits we synthesize using Hamming codes. We show that the approach we had initially developed to calculate theoretical efficiency limitations of emerging electronic paradigms can also be applied to CMOS technology base and can provide feedback to improve circuit design and performance. We illustrate our physical-information-theoretic methodology via applications to circuits that we synthesized using Hamming codes that result in detection of up to (d-1) bit errors and correction of up to (d-1)/2 bit errors where d represents the minimum Hamming distance between any pair of bit patterns. The fundamental lower bounds on energy dissipation are calculated for a one-bit reversible full adder and for irreversible full adders with block-code-, dual modular redundancy (DMR)- and triple modular redundancy (TMR)-based CMOS circuits. Our results reflect the fundamental difference in energy limitations across these circuits and provide insights into improved design strategies.
机译:在本研究中,我们执行物理信息理论分析,以获得用于使用汉明码合成的容错可逆CMOS电路的基本能量耗散界。我们表明,我们最初开发用于计算新兴电子范式的理论效率限制的方法也可以应用于CMOS技术基础,并提供反馈以改善电路设计和性能。我们通过应用程序来通过应用程序来说明我们的物理信息 - 理论方法,以便使用汉明代码来合成,这些代码导致检测到(D-1)位误差和最多校正(D-1)/ 2位错误,其中d表示任何一对位模式之间的最小汉明距离。为能量耗散的基本下限用于一位可逆的完整加法器和具有块码,双模块化冗余(DMR)和三重模块化冗余(TMR)的不可逆的完整加法器。基于CMOS电路。我们的结果反映了这些电路中能源限制的根本差异,并提供了改进设计策略的见解。

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