Statistical characterization and modeling of random telegraph noise effects in 65nm SRAMs cells

摘要

Random Telegraph Noise (RTN) effects are investigated in 65nm SRAM cells by using a new characterization method that provides a significant measurement time reduction. The variability induced in commercial SRAM cells is derived by applying statistical and physics based Montecarlo modeling to the experimental data. Results show that RTN can have a significant impact on the memory write operations and should therefore be taken into account during the memory design phase.