MSoC device based on SOI-structures

摘要

The architecture and topology of microsystem-on-chip for investigation of new structures and device elements is proposed. Realization of microsystem on silicon-on-insulator structures provides the small consumption of energy, increase fast-acting, radiation hardness and wide interval of working temperatures. The unified sensitive element is designed on silicon-on-insulator structures. The changes of informing signal parameters (capacities and/or resistance) are registered by circuits through the change of signal frequency of master supporting clock. The sensitive element has the regulated sensitivity and can be used for measuring of physical values of different type (of pressure, temperature, acceleration).