PMMA-enhancement of the lateral growth of transfer-free in situ CCVD grown graphene

摘要

In this paper we demonstrate the enhancement of the lateral growth of in situ grown catalytic CVD graphene [1] by the introduction of an additional solid carbon source. The fabricated field effect devices show few-layer graphene behavior with an Ion/Ioff ??? 5, up to a nominal channel length Lnom = 10 ??m. The prolonged growth of graphene enables the direct growth of larger devices. Furthermore sheet resistivity measurements using a modified greek cross structure are reported, extracting a sheet resistivity of PMMA-enhanced in situ grown graphene of Rs ??? 58 k??.