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Behavioral modeling to circuit design steps of an injection locked CDR in 0.18μm-CMOS

机译:在0.18μm-cmos中锁定CDR的电路设计步骤的行为建模

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In this paper the design, simulation and measurement procedure of injection locked clock and data recovery(CDR) circuit is discussed. The non-idealities of the CDR circuit such as power supply noise and lock detection are modeled behaviorally using Verilog-A. The required CDR specifications can be extracted in a very short period of simulation time with the designed behavioral model. The designed CDR features with full speed, dual loop, coarse and fine tuning and injection locked technology. The proposed CDR is fabricated with SMIC 0.18um 1P6M process and consumes 36mW from a single 1.8 V supply. Measured results show that the 250Mbps input NRZ signal could be correctly recovered with 2ps root-mean-square jitter.
机译:本文讨论了注射锁定时钟和数据恢复(CDR)电路的设计,仿真和测量过程。 CDR电路(如电源噪声和锁定检测)的非理想是使用Verilog-A的行为地建模。可以在使用设计的行为模型的模拟时间的非常短的模拟时间内提取所需的CDR规范。设计的CDR具有全速,双回路,粗且微调和注射锁定技术的功能。所提出的CDR用SMIC 0.18um 1P6M工艺制造,并从单个1.8 V电源消耗36mW。测量结果表明,250Mbps输入NRZ信号可以用2PS根均方抖动正确恢复。

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