Analytical surface potential based model for AlxGa1−xN/AlyGa1−yN/GaN DH HEMTs

摘要

We present an accurate and robust surface potential based compact model for AlxGa1-xN/AlyGa1-yN/GaN double hetero-junction high electron mobility transistors (DH HEMTs). The effects of band on the carrier distribution and polarization charges are studied in our model, which are characterized by the surface potential equation. An accurate analytical surface potential calculation is used to develop the current and charge model. The model reproduces the camel hump phenomenon of the DH HEMT device and is verified against TCAD simulations under a wide range of bias conditions.