A DC-20GHz attenuator design with RF MEMS technologies and distributed attenuation networks

摘要

In this paper we presented a design of 4 bit attenuator with RF MEMS switches and distributed attenuation networks. The substrate of this attenuator is high resistance silicon and the TaN thin film is used as resistors. RF MEMS switches have excellent microwave properties to reduce the insertion loss of attenuator and increase the insulation. Distributed attenuation networks employed as fixed attenuators have the advantages of smaller size and better performance in comparison to conventional π or T-type fixed attenuators. Over DC-20GHz, the simulation results show the attenuation flatness of 1.52-1.65dB and the attenuation range of 15.35-17.02dB. The minimum attenuation is 0.44-1.96dB in the interesting frequency range. The size of the attenuator is 2152 × 7500μm2.