STRUCTURAL AND MAGNITO-RESONANCE PROPERTIESOF INDIUM PHOSPHIDE

摘要

Low-dimensional semiconductors are a subject of intensive investigations due to their modified optical and electric properties caused by the quantum-dimensional effects being inherent to nanostructures. Among such the semiconductors a special attention is given to the indium phosphite (InP) as the technologically impotent material in manufacturing the lasers, diodes, solar batteries etc. The single-crystal InP plates are used as the substrates in growing different heterostructures in making the effective radiation sources (injection lasers, light-emitting diodes) and high-speed photodetectors for fiber-optics communication lines [1]. Today, the indium phosphite is the most probable material for chips mass-production. Forthermore, the indium phosphite is used in manufacturing the microwave transistors and Gann diodes [2]. Here, it is worth noting that the indium phosphit has the advantages as compared with the well-known gallium arsenide by keeping in mind the microwave properties characterized by such parameters as the electron-drift velocity, the intervalley electron transport time, the negative differential resistance value [3]. The properties of porous InP are interesting since in contrast to the cilicon, for example, the indium phosphite is the direct gap semiconductor that allows one to use such semiconductor for manufacturing the high-performance light-emitting devices. Finally, the InP is sufficiently inert material, oxidize weakly in the open air and does not interact virtually with acids. Due to that one can expect that the porous based layers will be more stable ones and less subjected to the environmental activity than the porous cilicon.