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Facile preparation of rutile TiO2 nanorod arrays in a low HCL concentration vapor environment by AVO process and characterizations

机译:通过AVO工艺和特征,在低温HCl浓度蒸气环境中进行金红石TiO2纳米槽阵列的舒适制备

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In this study, oriented rutile TiO2 nanorod arrays (NRAs) were directly grown on the titanium (Ti) thin films deposited on the Si substrate in a low concentration of hydrochloric acid aqueous solution vapor environment called acid vapor oxidation (AVO) process which is a facile and environmentally friendly hydrothermal route without using any catalysts, seeds or templates. The growth of the TiO2 NRAs can be controlled by adjusting the key experimental parameters, such as growth time and low HCL concentration and so on. The effects of the key experimental parameters on their morphologies and crystal structures were explored in detail by X-ray diffraction, scanning electron microscopy, transmission electron microscopy and selected area electron diffraction. The results indicate that the growth time and the low HCL concentration have influence on tailoring the crystal structures, like density, diameter and crystallinity of the TiO2 NRAs. The rutile TiO2 NRAs were single crystalline and grown along the [1 0 1] direction. The rutile TiO2 NRAs prepared in a low HCL concentration vapor environment by AVO process could be widely used in kinds of applications, especially gas sensors which will be explored further in the follow work.
机译:在该研究中,以低浓度的盐酸水溶液蒸气环境(AVO)过程直接在沉积在Si底物上沉积在Si底物上的钛(Ti)薄膜上生长导向金红石TiO2纳米峰阵列(NRA)。不使用任何催化剂,种子或模板的舒适和环保的水热线路径。通过调节键实验参数,例如生长时间和低HCl浓度等,可以控制TiO 2 NRA的生长。通过X射线衍射,扫描电子显微镜,透射电子显微镜和选择的区域电子衍射详细探讨了关键实验参数对其形态和晶体结构的影响。结果表明,生长时间和低HCl浓度对TiO 2 NRA的晶体结构相似,如密度,直径和结晶度的影响。金红石TiO 2 NRA是单晶并沿[1 0 1]方向生长。通过AVO工艺在低HCl浓度蒸气环境中制备的金红石TiO2 NRA可以广泛用于各种应用中,尤其是在遵循工作中进一步探索的气体传感器。

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