Large magnetocapacitance in p-n junction

摘要

We report a pronounced change of capacitance in silicon based p-n junction by manipulating the space charge region of the p-n junction under a magnetic field. By measuring the charge and discharge curves of p-n junction with a pulsed voltage, we find that with increasing the magnetic field the p-n junction resistance increases sharply, while the value of capacitance is obviously suppressed. Our results reveal that the magnetocapacitance and the magnetoresistance in p-n junction both arise from the redistribution of the space charge region under the magnetic field and give a new way for the development of future magnetic sensors with non-magnetic p-n junctions.