Promising Materials of Nonvolatile Memory Based on HfO_x and Achievement of Device Parameters in the TiN/Hf_(0.5)Zr_(0.5)O_2/TiN/SiO_2/Si and TiN/Hf_xAl_(1-x)O_y/Pt/SiO_2/Si Test Structures Obtained on the National Technological Basis

摘要

The properties and applications of materials of non-volatile memory based on HfO_2 were briefly considered. In addition, an overview of the obtained results was given. On the basis of these results, the possibility of use of the structures TiN/ Hf_(0.5)Zr_(0.5)O_2/ TiN/ SiO_2/ Si and TiN/ Hf_xAl_(1-x)O_y/ Pt/SiO_2/ Si for the non-volatile memory of FeRAM and ReRAM types formed by the atomic-layer deposition was shown. In addition, the scalability of these elements and opportunity to create promising submicron integrated circuits for ferroelectric and resistive memory were demonstrated.