Characteristic investigation of highly oriented Hf_(0.5)Zr_(0.5)O_2 thin-film resistive memory devices

摘要

In this work, characteristics of highly oriented Hf0.5Zr0.5O2 (HZO) thin-film resistive memory devices are investigated. The x-ray diffraction analysis indicates that the (-111) plane is the preferred orientation of HZO films, which is consistent with the prediction of two-dimensional crystal nucleus theory. Compared with semirandom HZO thin-film devices, the highly oriented (-111) HZO film exhibits excellent resistive switching behavior and superior retention time of up to 10(5)s with negligible performance degradation. Besides, highly oriented (-111) HZO films show a lower threshold of switching voltage, faster response time, and multilevel storage capability. Furthermore, the highly oriented (-111) HZO films can achieve better biosynaptic functions and plasticity. This study reveals that controlling the orientation of HZO thin films can promote and facilitate high-quality resistive memory devices. Published under license by AIP Publishing.