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A 28 GHz four channel T/R chipset in 65 nm CMOS technology

机译:采用65 nm CMOS技术的28 GHz四通道T / R芯片组

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This paper presents a four-channel bi-directional core chip in 65 nm CMOS for Ka-band phased array Transmit/Receive (T/R) module. Each channel consists of a bidirectional gain block (BDGB), a 5-bit step attenuator, a 5-bit phase shifter. The chip size is 4.1 × 1.2 mm2 including pads. The phase and attenuation coverage is 360° with the LSB of 11.25°, and 31 dB with the LSB of 1 dB, respectively. The Tx mode reference-state gain in each channel is 13.3 dB and the Rx mode gain is 16.5 dB including the 4-way power combiner. The output P1 dB in Tx mode is > 1 dBm and the noise figure in Rx mode is 7.5 dB. To authors' knowledge, this is the smallest size per channel Ka-band core chip in CMOS technology with bidirectional operation and enable dual polarization mode.
机译:本文介绍了一种用于65nm CMOS的四通道双向核心芯片,用于Ka波段相控阵发射/接收(T / R)模块。每个通道都包含一个双向增益模块(BDGB),一个5位步进衰减器,一个5位移相器。包括焊盘在内的芯片尺寸为4.1×1.2 mm2。 LSB为11.25°时,相位和衰减范围分别为360°和LSB为1 dB时为31 dB。每个通道的Tx模式参考状态增益为13.3 dB,包括4路功率组合器的Rx模式增益为16.5 dB。 Tx模式下的输出P1 dB> 1 dBm,Rx模式下的噪声系数为7.5 dB。据作者所知,这是具有双向操作并启用双极化模式的CMOS技术中每通道Ka波段核心芯片的最小尺寸。

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