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Design of Low-Power Binary Content Addressable Memory for Future Nanotechnologies

机译:用于未来纳米技术的低功耗二进制内容可寻址存储器的设计

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In today's industrial situation, there is a vast demand for devices with low power consumption. Therefore, the demand for reducing the power consumption in memory elements become vital as it occupies a significant portion of chip area. Content Addressable Memory is a kind of memory element used for search applications. The foremost CAM design requirement is to decrease power consumption connected with the huge amount of parallel active circuitry. In this work, a low-power Binary Content Addressable Memory (BCAM) design is implemented. The proposed CAM is simulated using Cadence Virtuoso simulator in 45, 90, and 180 nm technology. The proposed technique can be applied to nanotechnologies to reduce the power consumption without affecting the original functionality of the memory cell.
机译:在当今的工业形势中,对功耗低的设备存在巨大需求。因此,对存储器元件中的功耗降低功耗的需求变得至关重要,因为它占据了芯片区域的重要部分。内容可寻址存储器是用于搜索应用程序的内存元素。最重要的凸轮设计要求是减少与大量平行有源电路连接的功耗。在这项工作中,实现了低功耗二进制内容可寻址存储器(BCAM)设计。所提出的凸轮在45,90和180nm技术中使用Cadence Virtuoso模拟器进行模拟。该提出的技术可以应用于纳米技术以减少功耗而不影响存储器单元的原始功能。

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