Low-reflectance doped Mo-oxide films were deposited by reactive sputtering from Mo, MoNb, MoTa, and MoW targets. The optical and electrical properties of the resulting thin films were characterized. In addition, the ability to pattern the films by photolithography was evaluated by analyzing the wet etch rates in common etching solutions. Reflectance could be considerably reduced to values of 6 % (@ 550 nm) maintaining a colorless black film.
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