Design and implementation of a 200kHz single-phase boost-inverter using silicon carbide semiconductors

摘要

Energy efficiency and size reduction are crucial in modern power electronic converters where more energy saving and less volume of power converters are desired simultaneously. This paper will aim to propose efficient and compact boost-inverter operating at 200 kHz based on the Silicon Carbide (SiC) power switching devices. The boost-inverter using SiC power switches instead of Si devices will result in system level advantages such as reduced switching losses and volume, and increased power conversion efficiency. Theoretical analysis of the boost-inverter and controller design guideline based on the method of feedback linearization are presented. Simulation and experimental results from a laboratory prototype are presented to confirm the validity of the proposed inverter.