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Role of halide anion on exciton binding energy and disorder in hybrid perovskite semiconductors

机译:卤化物阴离子对混合钙钛矿半导体中激子结合能和无序性的作用

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We present a simplistic approach to determine the electronic-bandgap (E) and the exciton binding energy (E) of hybrid perovskite (ABX where, A= CHNH, B = Pb, X = Cl, Br or I ion) semiconductor film. In this study, we show the role of the halide anion (X-) on Eg and Ex using a simple room temperature UV-Vis absorption spectrum measurements and model our results using Elliot's theory of Wannier exciton model to determine the Eg and Ex. We also found that the disorder primarily arises from structure and not composition disorder. This is just a consequence of the fact the Urbach tail, which is a measure of disorder is reasonably independent of the halide anion among three perovskite films.
机译:我们提出了一种简单的方法来确定杂化​​钙钛矿(ABX,其中A = CHNH,B = Pb,X = Cl,Br或I离子)半导体膜的电子带隙(E)和激子结合能(E)。在这项研究中,我们使用简单的室温UV-Vis吸收光谱测量结果显示了卤化物阴离子(X-)在Eg和Ex上的作用,并使用Elliot的Wannier激子模型理论确定了Eg和Ex,从而对我们的结果进行了建模。我们还发现该疾病主要是由于结构而不是组成疾病引起的。这只是以下事实的结果:Urbach尾部(这是一种无序测量方法)在三个钙钛矿膜之间合理地独立于卤化物阴离子。

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