Optimization of pulling speed for decreasing thermal stress in different quartz crucible size with Czochralski method

摘要

Si crystalline solar cells have large market sizes in solar industry. Recently, there has been very tough season in Si crystalline growing companies because many Si growing companies have provided many Si wafers over demand of Si wafers. Si growing companies made an every effort to increase the productivity of Si ingots with increasing the pulling speed for cost down. But the increased pulling speed would generate the loss of structure of a Si mono crystal without both optimization of hot zones of growers and the proper level of the pulling speed. The thermal stress was simulated at different pulling speeds and quartz crucible sizes for 8 inch diameter of a mono crystal. The larger quartz crucible represented the lower thermal stress at the same pulling speed.