Advances in electric charge measurements in semi-conducting structures by non-destructive thermal methods

摘要

Stimuli space charge measurement methods can complement the microelectronic techniques in terms of sensitivity, charge localization and possibility to follow the electrical state of semi-conducting structures and components. In this paper, experimental set-ups based on thermal stimuli are used to obtain information about the electric charge distribution across metal-oxide-semiconductor structures of several hundreds of nanometers. Results obtained with thermal pulses and thermal steps are presented, studied and cross-correlated. They are confronted with analytical and numerical thermal and electrostatic simulations in order to assess and put into focus the possibilities of obtaining information about the charge distribution, particularly across the semiconductor and at the interface areas.