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Numerical modeling of reconfigurable THz devices based on graphene nanostructures using autonomous blocks with Floquet channels

机译:使用Floquet通道的自主模块基于石墨烯纳米结构的可重构THz器件的数值建模

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A numerical technique for modeling of devices based on graphene nanostructures at microwave, THz and IR frequency ranges by using rigorous mathematical models to solve the 3D diffraction boundary problems is developed. The models are based on the solution of full set of Maxwell`s equations with electrodynamic boundary conditions simultaneously with a model of the graphene surface conductivity determined from the Kubo formula. Using the computational algorithm based on the decomposition approach by autonomous blocks with Floquet channels (FABs), the scattering parameters of THz polarizers, based on the periodic 2D array of rectangular graphene nanopatches, depending on the frequency and angle of incidence for different values of the chemical potential were calculated for the THz frequency range. The results show that the S-parameters of graphene nanopatch arrays THz devices, tuned by the external bias electric field, can also be controlled by modifying the 2D array geometry and areal density, through changing the periodicity, the size and the configuration of the patches.
机译:通过使用严格的数学模型解决3D衍射边界问题,开发了一种基于石墨烯纳米结构的器件在微波,太赫兹和红外频率范围内建模的数值技术。这些模型基于具有电动边界条件的全套麦克斯韦方程组的解以及基于Kubo公式确定的石墨烯表面电导率的模型。使用基于具有Floquet通道(FAB)的自治块的分解方法的计算算法,基于矩形石墨烯纳米斑的周期性2D阵列,THz偏振器的散射参数取决于频率和入射角(对于不同值的矩形)。计算了太赫兹频率范围的化学势。结果表明,通过外部偏置电场调整的石墨烯纳米贴片阵列太赫兹器件的S参数也可以通过改变二维阵列的几何形状和面密度,通过改变贴片的周期性,大小和配置来控制。

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