BiCMOS integrated circuits; Ge-Si alloys; frequency multipliers; negative impedance convertors; BiCMOS; SiGe; distributed structure; efficiency 10.6 percent; efficiency 2.4 percent; frequency 124 GHz to 132.5 GHz; frequency quadrupler; inter coupling superposition technique; negative impedance; output power enhancement techniques; phase shifting buffer; power 26 mW; power 89 mW; quadrupler cells; size 0.13 mum; BiCMOS integrated circuits; Couplings; Harmonic analysis; Power amplifiers; Power generation; Shape; Silicon germanium; SiGe BiCMOS; inter coupling; quadrupler; superposition;
机译:一个234-261-GHz 55-nm SiGe BiCMOS信号源,具有5.4-7.2 dBm的输出功率,1.3%的DC-RF效率和1GHz的分频输出
机译:具有0.13 m SiGe BiCMOS技术的2频段增益和7.7 dBm输出功率的D波段共源共栅放大器
机译:具有24.3 DB增益的D波段共级放大器和0.13米SiGe BICMOS技术的7.7 dBm输出功率
机译:一个124到132.5 GHz频率四分夹,在0.13μmsige bicmos中具有4.4 dBm输出功率
机译:使用SiC HEMT器件上的GaN的3.6 GHz Doherty功率放大器,其饱和输出功率为40 dBm。
机译:大功率干扰源对异构环境中2.4 GHz频段无线传感器网络和设备的规划和部署的影响
机译:A 200-GHz电感调谐VCO $ - $ 7-DBM SIGE BICMOS中的$ 7-DBM输出功率