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Effects of acute electromagnetic fields exposure on the interhemispheric homotopic functional connectivity during resting state

机译:急性电磁场暴露对静止状态下半球同位功能连通性的影响

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In this paper, we aimed to investigate the possible effects of acute radiofrequency electromagnetic fields (EMF) on the interhemispheric homotopic functional connectivity with resting state functional magnetic resonance imaging (fMRI) technique. We designed a controllable LTE-related EMF exposure environment at 2.573 GHz and performed the 30 min real/sham exposure experiments on human brain under the safety limits. The resting state fMRI signals were collected before and after EMF exposure. Then voxel-mirrored homotopic connectivity method was utilized to evaluate the acute effects of LTE EMF exposure on the homotopic functional connectivity between two human hemispheres. Based on our previous research, we further demonstrated that the 30 min short-term LTE EMF exposure would modulate the interhemispheric homotopic functional connectivity in resting state around the medial frontal gyrus and the paracentral lobule during the real exposure.
机译:在本文中,我们旨在研究静止状态功能磁共振成像(fMRI)技术对急性射频电磁场(EMF)对半球同位功能连通性的可能影响。我们设计了一个可控制的LTE相关EMF暴露环境,频率为2.573 GHz,并在安全极限下对人脑进行了30分钟的真实/假暴露实验。在EMF暴露之前和之后收集静止状态的fMRI信号。然后,使用体素镜像的同位连接方法评估LTE EMF暴露对两个人半球之间同位功能连接的急性影响。根据我们之前的研究,我们进一步证明,在30分钟的短期LTE EMF暴露下,在实际暴露过程中,将调节额额回和中央小叶周围静止状态下半球间同位功能连接性。

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